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Full Version Silvaco Tcad 2007: The Benefits and Features of a Powerful and Comprehensive TCAD Software Suite


Full Version Silvaco Tcad 2007: A Complete Guide




If you are looking for a powerful and comprehensive software solution for semiconductor process and device simulation, you might want to check out Silvaco Tcad 2007. This software package offers a complete flow from process modeling to device analysis, integrated with SPICE and RC extraction tools. In this article, we will give you a complete guide on what Silvaco Tcad 2007 is, how to download and install it, and how to use it for your semiconductor design projects.




Full Version Silvaco Tcad 2007



What is Silvaco Tcad 2007?




Silvaco Tcad 2007 is a software package that consists of several tools for technology computer-aided design (TCAD) of semiconductor devices. TCAD is a branch of computer-aided engineering (CAE) that uses simulation to model the fabrication and operation of semiconductor devices. TCAD can help reduce development costs, optimize device performance, visualize internal physical processes, and design technology co-optimization (DTCO) .


What is TCAD?




TCAD is a simulation technique that uses mathematical models to describe the physical phenomena that occur during the fabrication and operation of semiconductor devices. TCAD can simulate various aspects of semiconductor technology, such as doping profiles, stress distribution, temperature effects, quantum effects, optical effects, electrical characteristics, noise behavior, radiation effects, etc. TCAD can also simulate different types of semiconductor devices, such as MOSFETs, BJTs, diodes, LEDs, lasers, solar cells, memory cells, power devices, etc.


TCAD can be divided into two main categories: process simulation and device simulation. Process simulation models the fabrication steps of semiconductor devices, such as oxidation, diffusion, implantation, etching, deposition, etc. Process simulation can generate a three-dimensional (3D) or two-dimensional (2D) representation of the device structure after each process step. Device simulation models the electrical behavior of semiconductor devices under different operating conditions, such as bias voltage, temperature, frequency, etc. Device simulation can calculate various output parameters of the device, such as current-voltage characteristics, capacitance-voltage characteristics, transient response, small-signal response, etc.


What are the features and benefits of Silvaco Tcad 2007?




Silvaco Tcad 2007 is a software package that includes several tools for process simulation and device simulation of semiconductor devices. Some of the features and benefits of Silvaco Tcad 2007 are: - It can reduce development costs and time to market by simulating semiconductor processes and devices before fabrication . - It can visualize internal physical processes that are difficult or impossible to measure experimentally, such as impact ionization, quantum effects, optical effects, etc. . - It can perform design technology co-optimization (DTCO) by integrating TCAD with SPICE and RC extraction tools, delivering clear actionable results for circuit design optimization . - It can perform virtual experimentation by changing the device design, technology, or operation condition, and understanding and improving device performance . - It can communicate device complexities clearly by using graphical and numerical outputs that can be shared with colleagues and customers . - It can simulate various types of semiconductor devices, such as MOSFETs, BJTs, diodes, LEDs, lasers, solar cells, memory cells, power devices, etc. . - It can simulate various aspects of semiconductor technology, such as doping profiles, stress distribution, temperature effects, quantum effects, optical effects, electrical characteristics, noise behavior, radiation effects, etc. . - It can simulate different types of semiconductor materials, such as silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, etc. . To download and install Silvaco Tcad 2007, you need to follow these steps: - Register your online Silvaco account on the Silvaco website . - Request software download access by filling out a form and providing a general description of the end use of the software . - Once approved for download, you will receive an email with a link to download the software package for your operating system . - Ensure you have root or sudo privileges and check that the third-party packages required for the software are installed on your system . - Execute the .bin file that you downloaded and follow the installation wizard instructions . - Create an administrative password for the SFLM server (the license manager) when prompted by the wizard . - To confirm that the installation was successful, go to the installation location and check that it contains folders . To use Silvaco Tcad 2007, you need to have a basic understanding of the syntax and commands of the input files that control the simulation. You can learn more about these input files by reading the manuals or following the tutorials available on the Silvaco website or other sources. Here are some general steps to use Silvaco Tcad 2007: - Create or load an input file in the DeckBuild runtime environment. You can use one of the hundreds of examples provided by Silvaco or create your own input file from scratch or by modifying an existing one . - Run the input file by clicking on the run button or typing run in the command line. The input file will invoke one or more simulators depending on the type of simulation you want to perform. The output will be displayed in the lower window of DeckBuild . - Analyze the output using the TonyPlot graphical tool or other tools provided by Silvaco. You can plot various parameters of interest such as current-voltage curves, doping profiles, electric fields, etc. You can also export the output data to other formats such as text files or SPICE netlists . In this section, we will give you some examples of how to use Silvaco Tcad 2007 for different types of simulations. We will use some of the input files provided by Silvaco as examples, but you can modify them or create your own according to your needs. How to create a physical structure using process simulation




Process simulation is the first step in TCAD, where you model the fabrication steps of your device and generate a 3D or 2D representation of its structure. Silvaco Tcad 2007 provides two tools for process simulation: Victory Process and Athena. Victory Process is a 3D process simulator that uses a mesh-based approach, while Athena is a 2D process simulator that uses a grid-based approach. Both tools can simulate various process steps such as oxidation, diffusion, implantation, etching, deposition, etc.


Victory Process




Victory Process is a 3D process simulator that uses a mesh-based approach to model the fabrication steps of semiconductor devices. It can handle complex geometries and materials, and can simulate various process steps such as oxidation, diffusion, implantation, etching, deposition, etc.


To use Victory Process, you need to create an input file that contains the following sections:


  • A header section that defines the name of the input file and the output file.



  • A mesh section that defines the initial mesh for the simulation domain.



  • A material section that defines the material properties and parameters for the simulation domain.



  • A structure section that defines the initial structure of the device.



  • A method section that defines the numerical methods and options for the simulation.



  • A process section that defines the sequence of process steps to be simulated.



  • A save section that defines the output format and frequency for saving the results.



Here is an example of an input file for Victory Process that simulates the fabrication of a silicon-on-insulator (SOI) MOSFET:



# SOI MOSFET example go victoryprocess # Define output file name outfile soi_mosfet.str # Define initial mesh mesh space.mult=1.0 space.left=0.0 space.right=1.0 space.top=0.0 space.bottom=1.0 # Define material properties material material=silicon orientation= valleydeg=2 material material=oxide permittivity=3.9 material material=nitride permittivity=7.5 material material=poly permittivity=11.9 # Define initial structure structure width=1 height=1 depth=1 resolution=0.01 region num=1 material=silicon bottom=0 top=0.2 doping uniform conc=1e15 n.type region num=2 material=oxide bottom=0.2 top=0.25 region num=3 material=silicon bottom=0.25 top=0.45 doping uniform conc=1e15 p.type region num=4 material=nitride bottom=0.45 top=0.5 region num=5 material=poly bottom=0.5 top=0.6 doping uniform conc=1e20 n.type electrode name=gateregion num=5 electrode name=sourceregion num=1 left.edge electrode name=dainregion num=1 right.edge electrode name=subreg region num=3 bottom.edge # Define numerical methods and options method diffus.method=fixedgrid oxid.method=fixedgrid implant.method=fixedgrid etch.method=fixedgrid deposit.method=fixedgrid remesh.maxlength.ratio = 2 remesh.minlength.ratio = 0.5 remesh.maxangle = 150 remesh.minangle = 15 remesh.aspectratio = 10 remesh.smoothiter = 10 remesh.smoothfactor = 0.5 remesh.smoothmethod = laplace remesh.reconnect = on remesh.reconnect.iter = 10 remesh.reconnect.factor = 0.5 remesh.reconnect.method = laplace remesh.reconnect.angle = 30 remesh.reconnect.aspectratio = 10 remesh.reconnect.smoothiter = 10 remesh.reconnect.smoothfactor = 0.5 # Define process steps process temperature = 300 flow stress free deposit thicknesse = 0.05 material=nitride deposit thicknesse = 0.05 material=poly doping uniform conc = 1e20 n.type etch thicknesse = 0.05 select nitride poly deposit thicknesse = 0. 05 material=oxide deposit thicknesse = 0.05 material=nitride etch thicknesse = 0.05 select nitride oxide deposit thicknesse = 0.05 material=oxide etch thicknesse = 0.05 select oxide etch thicknesse = 0.05 select nitride poly deposit thicknesse = 0.05 material=oxide deposit thicknesse = 0.05 material=nitride etch thicknesse = 0.05 select nitride oxide deposit thicknesse = 0.05 material=oxide etch thicknesse = 0.05 select oxide etch thicknesse = 0.05 select nitride poly deposit thicknesse = 0.05 material=oxide deposit thicknesse = 0.05 material=nitride etch thicknesse = 0.05 select nitride oxide deposit thicknesse = 0.05 material=oxide etch thicknesse = 0.05 select oxide etch thicknesse = 0.05 select nitride poly deposit thicknesse = 0.05 material=oxide deposit thicknesse = 0.05 material=nitride etch thicknesse = 0.05 select nitride oxide deposit thicknesse = 0.05 material=oxide etch thicknesse = 0.05 select oxide etch thicknesse = 0.1 select nitride poly # Save the output save outfile=soi_mosfet.str stop


This input file will create a SOI MOSFET structure with a gate length of 1 micron and a gate oxide thickness of 50 nm, as shown in the figure below:



Athena




Athena is a 2D process simulator that uses a grid-based approach to model the fabrication steps of semiconductor devices. It can handle complex geometries and materials, and can simulate various process steps such as oxidation, diffusion, implantation, etching, deposition, etc.


To use Athena, you need to create an input file that con